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Иш: Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell
First principles methods using CASTEP
Stewart J. Clark, Matthew Segall, Chris J. Pickard +4
Мақола200511 иқтибосABIHybrid functionals based on a screened Coulomb potential
Jochen Heyd, Gustavo E. Scuseria, Matthias Ernzerhof
Мақола200310 иқтибосABIRelaxation of Crystals with the Quasi-Newton Method
Bernd Pfrommer, Michel Côté, Steven G. Louie +1
Мақола19974 иқтибосABIA review on chemiresistive ZnO gas sensors
Mariane A. Franco, Patrick Pires Conti, Rafaela S. André +1
Шарҳ мақола20223 иқтибосABIPhotovoltaics Reaching for the Shockley–Queisser Limit
Bruno Ehrler, Esther Alarcón‐Lladó, Stefan W. Tabernig +3
Мақола20203 иқтибосABIFirst-principles prediction of charge mobility in carbon and organic nanomaterials
Jinyang Xi, Mengqiu Long, Ling Tang +2
Мақола20123 иқтибосABIStatus and perspectives of crystalline silicon photovoltaics in research and industry
Christophe Ballif, Franz‐Josef Haug, Mathieu Boccard +2
Шарҳ мақола20223 иқтибосABIAll-inorganic metal oxide transparent solar cells
Thanh Tai Nguyen, Malkeshkumar Patel, Joondong Kim
Мақола20202 иқтибосABI