Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Homogeneous 2D MoTe₂ p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

1. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

   Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

   Мақола2D Materials and ApplicationsPhysica B Condensed Matter20232 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.089796

2. Single flake homo p–n diode of MoTe ₂ enabled by oxygen plasma doping

   Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

   Мақола2D Materials and ApplicationsNanotechnology Reviews20241 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.248192