Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
A. WellnerLaboratoire de Physique des Solides , UMR 5477, IRSAMC, Université P. Sabatier, 118 route de Narbonne, 31062 Toulouse cedex 4, FranceVincent PaillardLaboratoire de Physique des Solides , UMR 5477, IRSAMC, Université P. Sabatier, 118 route de Narbonne, 31062 Toulouse cedex 4, FranceH. CoffinCEMES/CNRS , 29 Rue J.Marvig BP 4347, 31055 Toulouse cedex 2, FranceN. CherkashinCEMES/CNRS , 29 Rue J.Marvig BP 4347, 31055 Toulouse cedex 2, FranceC. BonafosCEMES/CNRS , 29 Rue J.Marvig BP 4347, 31055 Toulouse cedex 2, France
2004en
ABI
Аннотация
We report Raman spectra of a single layer of silicon nanoparticles, spatially ordered in SiO2 at a tunneling distance from a silicon substrate. This is achieved by exploiting effects which enhance the nanocrystal signal, while suppressing the substrate one. The method is applied to investigate the structure of ion-implantation-produced Si nanoparticles annealed under different conditions. The results, which are in good agreement with transmission electron microscopy data, are used to explain photoluminescence measurements.
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