De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States
V. V. RomanovPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaВ. А. КожевниковPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaChantal TraceyPeter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, RussiaN. T. BagraevIoffe Institute, 194021, St. Petersburg, Russia
2019en
ABI
Аннотация
The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба