Low-resistance orthorhombic MoO3-x thin film derived by two-step annealing
Lei MengDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, JapanAkira YamadaDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan
2018en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба