High carrier mobility tungsten-doped indium oxide films prepared by reactive plasma deposition in pure argon and post annealing
Gan TianCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, ChinaJingmei LiInstitute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu, 610064, ChinaLili WuCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, ChinaJingquan ZhangCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, ChinaXia HaoEngineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Chengdu, 610065, ChinaQingyuan ZhangCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, ChinaRuixing LiCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, ChinaWenhui ShiCollege of Materials Science and Engineering, Sichuan University, Chengdu, 610064, China
2021en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба