Мақола

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

E. E. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE. B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, Russia

2020en

ABI

Аннотация

Аннотация мавжуд эмас.

Идентификаторлар

DOI: 10.1016/j.jallcom.2020.155470

Иқтибослар ва манбалар

2 та иқтибос0 та фойдаланилган манба

Кўрсаткичлар — AkademScholar