Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy
R. R. ReznikInstitute of Analytical Instrument Making, Russian Academy of Sciences, St. Petersburg, RussiaG. É. CirlinInstitute of Analytical Instrument Making, Russian Academy of Sciences, St. Petersburg, RussiaI. V. ShtromInstitute of Analytical Instrument Making, Russian Academy of Sciences, St. Petersburg, RussiaА. И. ХребтовSt. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, RussiaI. P. SoshnikovInstitute of Analytical Instrument Making, Russian Academy of Sciences, St. Petersburg, RussiaN. V. KryzhanovskayaSt. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, RussiaE. I. MoiseevSt. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, RussiaA. E. ZhukovSt. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia
2018en
ABI
Аннотация
Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.
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