Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Britton W. H. BaugherDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAHugh ChurchillDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAYafang YangDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAPablo Jarillo‐Herrero
2014en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
4 та иқтибос0 та фойдаланилган манба