Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Defects in Irradiated Silicon. II. Infrared Absorption of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center

1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 иқтибос

   ABIABI:AkademIndex/openalex/2012.article.000064

2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

   МақолаMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.326849