Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 иқтибос

   ABIABI:AkademIndex/openalex/2012.article.000064

2. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsActa Materialia20141 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.489647

3. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

   МақолаMuon and positron interactions and applicationsActa Materialia20150 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000157