Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Mechanisms of growth and defect properties of epitaxial SiC

1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

   U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

   МақолаSemiconductor materials and devicesThin Solid Films202113 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144461

2. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

   Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

   МақолаIon-surface interactions and analysisRadiation effects and defects in solids20229 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144479

3. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

   Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

   МақолаIon-surface interactions and analysisSurface and Interface Analysis20226 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144470