Model of transport nonuniversality in thick-film resistors
C. GrimaldiInstitut de Production et Robotique, LPM, EPFL, CH-1015 Lausanne, SwitzerlandT. MaederInstitut de Production et Robotique, LPM, EPFL, CH-1015 Lausanne, SwitzerlandP. RyserInstitut de Production et Robotique, LPM, EPFL, CH-1015 Lausanne, SwitzerlandS. SträsslerInstitut de Production et Robotique, LPM, EPFL, CH-1015 Lausanne, Switzerland
2003en
ABI
Аннотация
We propose a model of transport in thick-film resistors which naturally explains the observed nonuniversal values of the conductance exponent t extracted in the vicinity of the percolation transition. Essential ingredients of the model are the segregated microstructure typical of thick-film resistors and tunneling between the conducting grains. Nonuniversality sets in as a consequence of wide distribution of interparticle tunneling distances.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба