Electric and luminescence properties of GaAs-AIIBIVCV2 single crystals
I. K. PolushinaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaV. Yu. Rud’
1999en
ABI
Аннотация
GaAs-AIIBIVC 2 V single crystals are grown by crystallization from dilute gallium fluxed solutions. The electric and luminescence properties of the crystals obtained are investigated. It is shown that the technological process is accompanied by the standard doping of gallium arsenide and makes it possible to grow gallium arsenide single crystals whose optoelectronic properties are controlled by the AIIBIVAs2 compound introduced into the fluxed solution.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба