Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

1. Short-channel effects in SOI MOSFETs

   S. Veeraraghavan, J.G. Fossum

   Мақола19897 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390677

2. Statistical variability and reliability in nanoscale FinFETs

   Xingsheng Wang, A. R. Brown, B. Cheng +1

   Мақола20112 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390676

3. Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

   Asen Asenov, Savaş Kaya, A. R. Brown

   Мақола20032 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390678

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502691

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502692

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502693

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502694

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502695

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.502696

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.502697