Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Lateral MoS₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

1. Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

   Hsu‐Sheng Tsai, Jhe‐Wei Liou, Yi-Chung Wang +6

   Мақола2D Materials and ApplicationsRSC Advances20170 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000210

2. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

   Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

   МақолаElectronic and Structural Properties of OxidesDiamond and Related Materials20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001254