Experimental investigation of semiconductor structures of the power source based on carbon-14
V. I. ChepurnovSamara National Research University
LLC «BetaVoltaika»C. I.Galina PuzyrnayaSamara National Research University
LLC «BetaVoltaika»Пузырная Г.В.Albina GurskayaSamara National Research UniversityГурская А.В.M. V. DolgopolovLLC «BetaVoltaika»
Samara National Research UniversityДолгополов М.В.N.S. AnisimovSamara National Research UniversityАнисимов Н.С.
2019en
ABI
Аннотация
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junction, an evaluation of the effectiveness of the introduction of carbon-14 in the molecule silicon carbide electrophysical measurements. In the process used the technology of solid-phase transformation of the surface of the monocrystalline silicon substrate in the phase of monocrystalline silicon carbide by chemical transport of carbon in the environment of hydrogen.
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