Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon

1. On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

   G. Abdurakhmanov

   МақолаElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics20145 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.405405

2. Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass

   G. Abdurakhmanov, V. I. Shimanski, Б. Л. Оксенгендлер +2

   МақолаElectrical and Thermal Properties of MaterialsTechnical Physics20213 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.000842