Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures

1. Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

   Ahmet Saymbetov, Р. А. Муминов, Nursultan Japashov +6

   МақолаSilicon and Solar Cell TechnologiesMaterials20212 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.000854

2. Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

   Ahmet Saymbetov, Р. А. Муминов, Nursultan Japashov +4

   МақолаGraphite, nuclear technology, radiation studiesPhysical Sciences and Technology20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.517102

3. Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

   Ahmet Saymbetov, Р. А. Муминов, Jing Zhang +8

   МақолаAdvanced Energy Technologies and Civil Engineering InnovationsScientific Reports20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.009538