Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
M. W. DashiellDepartment of Electrical and Computer Engineering, University of Delaware, Newark, DE, USAJ. KolodzeyDepartment of Electrical and Computer Engineering, University of Delaware, Newark, DE, USAP. CrozatInstitute d'Electronique Fondamental, Universite Paris XI, Orsay, FranceF. AnielInstitute d'Electronique Fondamental, Universite Paris XI, Orsay, FranceJ.-M. LourtiozInstitute d'Electronique Fondamental, Universite Paris XI, Orsay, France
2002en
ABI
Аннотация
The bias dependence of the single-port microwave reflection gain of 15 μm-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a function of frequency. A simple equivalent circuit accurately modeled the data and yielded the forward-bias junction capacitance, which cannot be obtained by conventional low frequency capacitance-voltage techniques. The diodes were highly-doped step p-i-n junctions and exhibited a peak current density of 16 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The microwave reflection gain and cut-off frequency were 12 dB land 1.6 GHz, respectively, with a speed index (slew rate) of 7.1 V/ns.
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