Enhanced Plasma Uniformity in RF Plasma With Side Multihole
Hyo‐Chang LeeDepartment of Electrical Engineering, Hanyang University, Seoul, KoreaChin‐Wook ChungDepartment of Electrical Engineering, Hanyang University, Seoul, Korea
2014en
ABI
Аннотация
Capacitively coupled plasma source with side multihole is studied. Due to the hollow cathode effect at the multihole, edge plasma density is strongly increased and thus, plasma uniformity is significantly enhanced.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба