First-principle investigation of LiSrX (X=P and As) half-Heusler semiconductor compounds
A. AzouaouiLaboratoire de Physique du Solide, Faculté des sciences Dhar Mahraz, Université Sidi Mohammed Ben Abdellah, Fes, MoroccoA. HarbiLaboratory of Chemistry and Physics of Materials LCPM, Faculty of Sciences, Department of Chemistry, University of Casablanca, Casablanca, MoroccoM. MoutaabbidLaboratory of Chemistry and Physics of Materials LCPM, Faculty of Sciences, Department of Chemistry, University of Casablanca, Casablanca, MoroccoMohamed IdiriEngineering and Materials Laboratory, Ben M’Sik Faculty of Sciences, Hassan II University of Casablanca, Casablanca, MoroccoA. eddiaiCondensed Matter Physics Laboratory, Faculty of science Ben M’Sik, University Hassan II of Casablanca, Casablanca, MoroccoN. BenzakourLaboratoire de Physique du Solide, Faculté des sciences Dhar Mahraz, Université Sidi Mohammed Ben Abdellah, Fes, MoroccoA. HourmatallahEcole Normale Supérieure, Fes, MoroccoK. BouslykhaneLaboratoire de Physique du Solide, Faculté des sciences Dhar Mahraz, Université Sidi Mohammed Ben Abdellah, Fes, MoroccoR. MasrourLaboratoire de Physique du Solide, Faculté des sciences Dhar Mahraz, Université Sidi Mohammed Ben Abdellah, Fes, MoroccoA. RezzoukLaboratoire de Physique du Solide, Faculté des sciences Dhar Mahraz, Université Sidi Mohammed Ben Abdellah, Fes, Morocco
2022en
ABI
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