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Иш: Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

  1. Radiation effects in semiconductors

    J. W. Corbett, G. D. Watkins

    Китоб19717 иқтибос
    ABI

  2. Microcomputer program for analysis of positron annihilation lifetime spectra

    J. Kansy

    Мақола19966 иқтибос
    ABI

  3. Positron Annihilation in Semiconductors

    R. Krause‐Rehberg, Hartmut S. Leipner

    Китоб19996 иқтибос
    ABI

  4. Defect spectroscopy with positrons: a general calculational method

    M. J. Puska, R M Nieminen

    Мақола19835 иқтибос
    ABI

  5. Positrons in Solids

    P. Hautojärvi

    Китоб19795 иқтибос
    ABI

  6. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

    В. П. Маркевич, I.D. Hawkins, А. R. Peaker +5

    Мақола20044 иқтибос
    ABI

  7. Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

    Mohamed Elsayed, R. Krause‐Rehberg, W. Anwand +2

    Мақола20113 иқтибос
    ABI

  8. Theoretical and experimental study of positron annihilation with core electrons in solids

    M. Alatalo, B. Barbiellini, Mikko Hakala +6

    Мақола19963 иқтибос
    ABI

  9. Shallow positron traps in GaAs

    K. Saarinen, P. Hautojärvi, A. Vehanen +2

    Мақола19893 иқтибос
    ABI

  10. Lattice defects in semiconductors

    Ryukichi Hashiguchi

    Китоб19683 иқтибос
    ABI

  11. Divacancy clustering in neutron-irradiated and annealed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type germanium

    K. Kuitunen, Filip Tuomisto, J. Slotte +1

    Мақола20082 иқтибос
    ABI

  12. Observation of Irradiation-Induced Interstitial Copper Impurity in Germanium

    Akio Hiraki, J. W. Cleland, J. H. Crawford

    Мақола19672 иқтибос
    ABI

  13. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

    Miki Naganawa, Yasuo Shimizu, Masashi Uematsu +4

    Мақола20082 иқтибос
    ABI

  14. Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

    A. Giese, N. A. Stolwijk, H. Bracht

    Мақола20002 иқтибос
    ABI

  15. Deep level defects produced by electron irradiation and their annealings in undoped germanium

    Kazuyoshi Ito, Takashi Ito, K. Mizuno

    Мақола19862 иқтибос
    ABI

  16. Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium

    N. Fukuoka, H. Yamaji, M. Honda +1

    Мақола19922 иқтибос
    ABI

  17. Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

    Mohamed Elsayed, R. Krause‐Rehberg, B. Korff +2

    Мақола20132 иқтибос
    ABI

  18. Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium

    Noboru Fukuoka, Haruo Saito, J. W. Cleland

    Мақола19802 иқтибос
    ABI

  19. Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mprescripts/><mml:mrow/><mml:mrow><mml:mn>70</mml:mn></mml:mrow><mml:mrow/><mml:mrow/></mml:mmultiscripts></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:mrow><mml:mn>74</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>Ge isotope heterostructures: An approach to self-diffusion studies

    H. D. Fuchs, W. Walukiewicz, E. E. Häller +6

    Мақола19952 иқтибос
    ABI

  20. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium

    Martin Werner, H. Mehrer, H. D. Hochheimer

    Мақола19852 иқтибос
    ABI

  21. Direct observations of the vacancy and its annealing in germanium

    J. Slotte, Simo Kilpeläinen, Filip Tuomisto +2

    Мақола20112 иқтибос
    ABI

  22. Production and annealing of electron irradiation damage in ZnO

    D. C. Look, D. C. Reynolds, J. W. Hemsky +2

    Мақола19992 иқтибос
    ABI

  23. General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

    S. M. Hu

    Мақола19692 иқтибос
    ABI

  24. Divacancy defects in germanium studied using deep-level transient spectroscopy

    M. Christian Petersen, A. Nylandsted Larsen, A. Mesli

    Мақола20102 иқтибос
    ABI

  25. Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

    V. Ranki, A. Pelli, K. Saarinen

    Мақола20042 иқтибос
    ABI