Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

1. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsActa Materialia20141 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.489647

2. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

   МақолаMuon and positron interactions and applicationsActa Materialia20150 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000157