Long-range Finnis–Sinclair potentials
Adrian P. SuttonDepartment of Metallurgy and Science of Materials, Oxford University , Parks Road, Oxford, OX1 3PH, EnglandJinlin ChenDepartment of Metallurgy and Science of Materials, Oxford University , Parks Road, Oxford, OX1 3PH, England
1990en
ABI
Аннотация
Finnis–Sinclair potentials are developed for computer simulations in which van der Waals type interactions between well separated atomic clusters are as important as the description of metallic bonding at short range. The potentials always favour f.c.c. and h.c.p. structures over the b.c.c. structure. They display convenient scaling properties for both length and energy, and a number of properties of the perfect crystal may be derived analytically.
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Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба