Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron
Ying GaoDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USAStanislav I. SolovievDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USAT. S. SudarshanDepartment of Electrical Engineering, University of South Carolina, Columbia, South Carolina, SC 29208, USA
2001en
ABI
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