Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   МақолаSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20195 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000379

2. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

   Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

   МақолаSilicon and Solar Cell TechnologiesAIP conference proceedings20234 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.384840

3. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   МақолаThermal properties of materialsAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009659