Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Transition layer formation simulation during film deposition by an ion-molecular beam

1. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

   Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000274

2. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

   T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

   МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19973 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.488710

3. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

   S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

   МақолаSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19971 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.488712