On the theory of anomalous photovoltage in multilayer structures with p-n junctions

Steady-and nonsteady-state photovoltages appearing in a multilayer structure with p-n junctions under the conditions of nonuniform illumination are considered for an arbitrary ratio between the diffusion length L and the sizes d of the p-and n-regions. It is shown that, for , the photovoltage is substantially lower (by d 2/12L 2 times) than in the case of owing to the mutual influence of neighboring p-n junctions. Relaxation of the photovoltage is controlled by recharging of the barrier capacitances of p-n junctions, and the relaxation time exceeds by several orders of magnitude the lifetime of nonequilibrium charge carriers in the p-and n-regions. The results obtained make it possible to explain the special features of the effect of anomalous photovoltage in polycrystalline films.

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