Efficient 3.3 µm light emitting diodes for detecting methane gas at room temperature

In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3 µm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.

Ҳали таржима қилинмаган