Study of defect annealing by supercurrent proton beam irradiation and of radiation defect profiles in GaAs by the positron annihilation method
A. D. PogrebnyakNuclear Physics Institute, Tomsk Polytechnical Institute, Tomsk 634050, USSRВ. С. ЛопатинNuclear Physics Institute, Tomsk Polytechnical Institute, Tomsk 634050, USSRR.G. ZiyakaevNuclear Physics Institute, Tomsk Polytechnical Institute, Tomsk 634050, USSRS.A. VorobievNuclear Physics Institute, Tomsk Polytechnical Institute, Tomsk 634050, USSR
1983en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба