(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Takashi HayashiDepartment of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, JapanMasaaki TanakaDepartment of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, JapanTatau NishinagaDepartment of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, JapanHiroshi ShimadaCryogenic Center, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113, JapanH. TsuchiyaCryogenic Center, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113, JapanYouiti OtukaCryogenic Center, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113, Japan
1997en
ABI
Аннотация
Аннотация мавжуд эмас.
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