InGaAsP heterostructure avalanche photodiodes with high avalanche gain
Katsuhiko NishidaCentral Research Laboratories, Nippon Electric Co., Ltd., Miyazaki, Takatsuku, Kawasaki, JapanK. TaguchiCentral Research Laboratories, Nippon Electric Co., Ltd., Miyazaki, Takatsuku, Kawasaki, JapanYoshishige MatsumotoCentral Research Laboratories, Nippon Electric Co., Ltd., Miyazaki, Takatsuku, Kawasaki, Japan
1979en
ABI
Аннотация
Distinct improvements in avalanche-gain and dark-current characteristics have been made in InGaAsP heterostructure APD’s. A planar-type p-n junction is formed in an InP window layer, separated from a light-absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark-current density as low a 1 μA/cm2 at 0.5 Vb.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
5 та иқтибос0 та фойдаланилган манба