Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors
Y. IyeCore Research for Evolutionary Science and Technology (CREST), Japan Corporation of Science and Technology, Mejiro, Toshima-ku, Tokyo 171-0031, JapanA. OiwaInstitute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106-8666, JapanAkira EndoInstitute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106-8666, JapanShingo KatsumotoCore Research for Evolutionary Science and Technology (CREST), Japan Corporation of Science and Technology, Mejiro, Toshima-ku, Tokyo 171-0031, JapanF. MatsukuraResearch Institute for Electrical Communication, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577, JapanAidong ShenResearch Institute for Electrical Communication, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577, JapanHiroshi OhnoResearch Institute for Electrical Communication, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577, JapanH. MunekataImaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
1999en
ABI
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