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Иш: Positron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect

1. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

   МақолаMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.326849