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Иш: Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

  1. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    МақолаAdvanced Chemical Physics StudiesComputational Materials Science19948 иқтибос
    ABI

  2. Tight‐binding molecular dynamics simulation of SiH bond dissociation in silicon clusters

    Z. M. Khakimov, F. T. Umarova, N. T. Sulaymonov +2

    МақолаSilicon Nanostructures and PhotoluminescenceInternational Journal of Quantum Chemistry20032 иқтибос
    ABI

  3. Superconducting glass with diagonal disorder

    A. G. Pedan, I. O. Kulik

    МақолаTheoretical and Computational PhysicsSoviet Journal of Low Temperature Physics19820 иқтибос
    ABI

  4. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    МақолаThin-Film Transistor TechnologiesMRS Proceedings19980 иқтибос
    ABI

  5. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    МақолаSilicon and Solar Cell TechnologiesMRS Proceedings19980 иқтибос
    ABI