Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Isamu AkasakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanHiroshi AmanoNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanYasuo KoideNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanKazumasa HiramatsuNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanNobuhiko SawakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, Japan
1989en
ABI
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Аннотация мавжуд эмас.
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