‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si
Arrigo AddamianoNaval Research Laboratory, Washington, D.C. 20375J.A. SpragueNaval Research Laboratory, Washington, D.C. 20375
1984en
ABI
Аннотация
The nature of the buffer layers needed for the single crystal deposition of cubic SiC on Si substrates was studied. It is concluded that the buffer layer is a stressed monocrystalline layer of cubic SiC.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба