Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

1. Ion-Molecular Epitaxy

   A. Lyutovich

   БобSemiconductor materials and devices19870 иқтибос

   ABIABI:AkademIndex/openalex/1987.chapter.000006

2. Characterisation of the generation of ions in electron beam evaporator for the control of metal deposition processes

   A. Lyutovich, Karl Maile, A. Gusko +2

   Мақолаnanoparticles nucleation surface interactionsSurface and Coatings Technology20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000117