Explanation for carrier removal and type conversion in irradiated silicon solar cells
Tsutomu YamaguchiDepartment of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, JapanStephen TaylorToyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, JapanS. WatanabeDepartment of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, JapanK. AndoDepartment of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680, JapanMasafumi YamaguchiToyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468, JapanT. HisamatsuSumio Matsuda
1998en
ABI
Аннотация
Heavy doses of radiation in space can cause the failure of n+/p/p+ silicon solar cells due to the gradual introduction of compensating defects into the base layer of the diode. In this letter, we show that the radiation-induced defects, which play the most important role in this process, referred to as “carrier removal,” are probably minority-carrier traps at an energy level approximately 0.18 eV below the conduction band. We conclude that these defects must be positively charged before electron capture, and therefore, act as donor centers which compensate the p-type base layer.
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