Ушбу иш иқтибос қилган ишлар

6 та иш

Иш: Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

1. Physics of Semiconductor Devices

   J.-P. Colinge, Cindy Colinge

   Китоб200258 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199260

2. Physics of semiconductor devices

   Мақола19906 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.614904

3. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

   R. C. Barrett, C. F. Quate

   Мақола19915 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568586

4. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

   Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

   Мақола19853 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568587

5. Radiation-induced space-charge buildup in MOS structures

   J.P. Mitchell

   Мақола19672 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.535427

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.615303