Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

The formation of a lead arachidate film was studied at interfaces of an aqueous solution of lead nitrate with the air and with a solid hydrophilic substrate. The efficiency of lead transfer onto a semiconductor substrate by the horizontal lift method was estimated. Optimal conditions of the fabrication of lead arachidate monolayers with minimum oxygen content were found in order to use these layers as an impurity source for CdS. It was shown that an optimal relationship between the photosensitivity of CdS films and losses induced by accelerated electrons is attained due to the formation of PbS precipitates with the radius of at least 3 nm in a topmost layer with the thickness of about the depth of maximal energy dissipation of the ionizing radiation.

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