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States in the Gap in Glassy Semiconductors

R. A. StreetMax-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of GermanyN. F. MottMax-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of Germany
1975en
ABI

Аннотация

A model is discussed which for the first time provides a unified description of many electrical and optical properties of chalcogenide glasses. It is proposed that localized gap states are at dangling bonds, and that lattice-distortion effects are sufficiently strong that these states exhibit an effective negative electron-electron correlation energy.

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