Capture, emission and recombination at a deep level via an excited state
Gregory J. ReesDept. of Solid State Phys., Univ. of Lund, Lund, SwedenH. G. GrimmeissDept. of Solid State Phys., Univ. of Lund, Lund, SwedenErik JanzénDept. of Solid State Phys., Univ. of Lund, Lund, SwedenB. SkarstamDept. of Solid State Phys., Univ. of Lund, Lund, Sweden
1980en
ABI
Аннотация
The kinetics of carrier capture, emission and recombination at a deep trap are studied using a model in which these processes go via an excited state. It is shown that non-exponential transients can result and that detailed balance interpretations should be used with care. The model is used to interpret experiments on Si:Se and Si:S.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба