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Иш: Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

1. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

   V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2

   МақолаPhase-change materials and chalcogenidesMaterials science forum20061 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000253