Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2
E. I. GoldmanInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, RussiaYu. V. GulyaevInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, RussiaA. G. ZhdanInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, RussiaГ. В. ЧучеваInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2001en
ABI
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Аннотация мавжуд эмас.
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