Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Ab initio pseudopotential calculations of point defects and boron impurity in silicon

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   МақолаThin-Film Transistor TechnologiesMRS Proceedings19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   МақолаSilicon and Solar Cell TechnologiesMRS Proceedings19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000320