V. N. Ryazanov

1 ta ish

Fizika-Texnika Instituti

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19900 iqtibos

   ABIABI:AkademIndex/1990.article.000080