Edik U. Rafailov

1 ta ish

Fizika-Texnika Instituti

1. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000239