D. N. Tret’yakov

2 ta ish

Russian Academy of Sciences

1. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000239

2. Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

   В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000172